Consider the following statements and and identify the correct choice of the given answers . The width of the depletion layer in a - junction diode increases in forward bias . In an intrinsic semiconductor the fermi energy level is exactly in the middle of the forbidden gap |
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a) |
is true and is false |
b) |
Both and are false |
c) |
is false and is true |
d) |
Both and are true |
Consider the following statements and and identify the correct choice of the given answers . The width of the depletion layer in a - junction diode increases in forward bias . In an intrinsic semiconductor the fermi energy level is exactly in the middle of the forbidden gap |
|||
a) |
is true and is false |
b) |
Both and are false |
c) |
is false and is true |
d) |
Both and are true |
(c) In forward biasing of junction diode width of depletion layer decreases. In intrinsic semiconductor fermi energy level is exactly in the middle of the forbidden gap |