and both have same lattice structure, having 4 bonding electrons in each. However, is insulator where as is intrinsic semiconductor. This is because |
|
a) |
In case of the valance band is not completely filled at absolute zero temperature |
b) |
In case of the conduction band is partly filled even at absolute zero temperature |
c) |
The four bonding electrons in the case of lie in the second orbit, whereas in the case of they lie in the third |
d) |
The four bonding electrons in the case of lie in the third orbit, whereas for Si they lie in the fourth orbit |
and both have same lattice structure, having 4 bonding electrons in each. However, is insulator where as is intrinsic semiconductor. This is because |
|
a) |
In case of the valance band is not completely filled at absolute zero temperature |
b) |
In case of the conduction band is partly filled even at absolute zero temperature |
c) |
The four bonding electrons in the case of lie in the second orbit, whereas in the case of they lie in the third |
d) |
The four bonding electrons in the case of lie in the third orbit, whereas for Si they lie in the fourth orbit |