Last Updated On [03-11-2023]
When p-n junction diode is forward biased then
a)
The depletion region is reduced and barrier height is increased
b)
The depletion region is widened and barrier height is reduced
c)
Both the depletion region and barrier height are reduced
d)
Both the depletion region and barrier height are increased
When p-n junction diode is forward biased then
a)
The depletion region is reduced and barrier height is increased
b)
The depletion region is widened and barrier height is reduced
c)
Both the depletion region and barrier height are reduced
d)
Both the depletion region and barrier height are increased
Question ID - 150573 :-
When p-n junction diode is forward biased then
a)
The depletion region is reduced and barrier height is increased
b)
The depletion region is widened and barrier height is reduced
c)
Both the depletion region and barrier height are reduced
d)
Both the depletion region and barrier height are increased
|
When p-n junction diode is forward biased then |
|
|
a) |
The depletion region is reduced and barrier height is increased |
|
b) |
The depletion region is widened and barrier height is reduced |
|
c) |
Both the depletion region and barrier height are reduced |
|
d) |
Both the depletion region and barrier height are increased |
|
(c) When |
-end of p-n junction is connected to positive terminal of battery and 
-end to negative terminal of battery, then p-n junction is said to be in forward bias. In forward bias, the more numbers of electrons go from 
-region to 
-region and more number of holes go from 
-region to
-region. Therefore, major current due to both types of carriers takes place through the junction causing, more recombination of electron hole pairs thus causing reduction in height of depletion region and barrier potential.Next Question :
|
When 1 A current flows for 1 min through a silver voltmeter, it deposits 0.067 g of silver on the cathode, then how much charge will flow to deposit 108 g of silver? |
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a) |
|
b) |
|
c) |
8.7 |
d) |
4.3 |
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