Last Updated On [03-11-2023]
The difference in the variation of resistance with temperature in a metal and a semiconductor arises essentially due to the difference in the
a)
Crystal structure
b)
Variation of the number of charge carriers with temperature
c)
Type of bonding
d)
Variation of scattering mechanism with temperature
The difference in the variation of resistance with temperature in a metal and a semiconductor arises essentially due to the difference in the
a)
Crystal structure
b)
Variation of the number of charge carriers with temperature
c)
Type of bonding
d)
Variation of scattering mechanism with temperature
Question ID - 151007 :-
The difference in the variation of resistance with temperature in a metal and a semiconductor arises essentially due to the difference in the
a)
Crystal structure
b)
Variation of the number of charge carriers with temperature
c)
Type of bonding
d)
Variation of scattering mechanism with temperature
|
The difference in the variation of resistance with temperature in a metal and a semiconductor arises essentially due to the difference in the |
|
|
a) |
Crystal structure |
|
b) |
Variation of the number of charge carriers with temperature |
|
c) |
Type of bonding |
|
d) |
Variation of scattering mechanism with temperature |
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(b) The difference in the variation of resistance with temperature in a metal and semiconductor is caused due to the difference in the variation of the number of charge carriers with temperature. |
Next Question :
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Two electric bulbs marked 40 W, 220 V and 60 W, 220 V when connected in series, across same voltage supply of 220 V, the effective power is |
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a) |
0.5 |
b) |
0.48 |
c) |
0.24 |
d) |
0.16 |
and when connected in parallel the effective power is 
. Then 
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