The difference in the variation of resistance with temperature in a metal and a semiconductor arises essentially due to the difference in the |
|
a) |
Crystal structure |
b) |
Variation of the number of charge carriers with temperature |
c) |
Type of bonding |
d) |
Variation of scattering mechanism with temperature |
The difference in the variation of resistance with temperature in a metal and a semiconductor arises essentially due to the difference in the |
|
a) |
Crystal structure |
b) |
Variation of the number of charge carriers with temperature |
c) |
Type of bonding |
d) |
Variation of scattering mechanism with temperature |
(b) The difference in the variation of resistance with temperature in a metal and semiconductor is caused due to the difference in the variation of the number of charge carriers with temperature. |