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Last Updated On [03-11-2023]

A potential difference of  is applied between the opposite faces of a Ge crystal plate of area  and thickness . If the concentration of electrons in  is  and mobilities of electrons and holes are  and  respectively, then the current flowing through the plate will be

a)

0.25

b)

0.45

c)

0.56

d)

0.64


Question ID - 151031 :-

A potential difference of  is applied between the opposite faces of a Ge crystal plate of area  and thickness . If the concentration of electrons in  is  and mobilities of electrons and holes are  and  respectively, then the current flowing through the plate will be

a)

0.25

b)

0.45

c)

0.56

d)

0.64

1 Answer
5876 Votes
3537

Answer Key : (d) -

(d)



Next Question :

With the rise of  temperature the resistivity of a semiconductor

a)

Remains unchanged

b)

Increases

c)

Decreases

d)

First increases and then decreases


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