A potential difference of  is applied between the opposite faces of a Ge crystal plate of area  and thickness . If the concentration of electrons in  is  and mobilities of electrons and holes are  and  respectively, then the current flowing through the plate will be
a)	0.25	b)	0.45	c)	0.56	d)	0.64

Question ID - 151031 | SaraNextGen Top Answer

A potential difference of  is applied between the opposite faces of a Ge crystal plate of area  and thickness . If the concentration of electrons in  is  and mobilities of electrons and holes are  and  respectively, then the current flowing through the plate will be
a)	0.25	b)	0.45	c)	0.56	d)	0.64