A p-n photodiode is made of a material with a band gap of 2.0 eV. The minimum frequency of the radiation that can be absorbed by the material is nearly |
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a) |
Hz |
b) |
Hz |
c) |
Hz |
d) |
Hz |
A p-n photodiode is made of a material with a band gap of 2.0 eV. The minimum frequency of the radiation that can be absorbed by the material is nearly |
|||||||
a) |
Hz |
b) |
Hz |
c) |
Hz |
d) |
Hz |
(b) p-n photodiode is a semiconductor diode that produces a significant current when illuminated. It is reversed biased but is operated below the breakdown voltage. Energy of radiation = band gap energy i.e., v = 2.0 eV or v = Hz |