A p-n junction has acceptor impurity concentration of in the side and donor impurity concentration of in the side. What is the contact potential at the junction? ( thermal energy, intrinsic carrier concentration ) |
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a) |
ln () |
b) |
ln () |
c) |
ln () |
d) |
ln () |
A p-n junction has acceptor impurity concentration of in the side and donor impurity concentration of in the side. What is the contact potential at the junction? ( thermal energy, intrinsic carrier concentration ) |
|||||||
a) |
ln () |
b) |
ln () |
c) |
ln () |
d) |
ln () |
(a) Constant potential at the junction ln ln ln () |