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Last Updated On 23-10-2022 - By Sara

Mobility of electrons in a semiconductor in defined as the ratio of their drift velocity of the applied electric field.  If, for an n-type semiconductor, the density of electrons is 1019m−3 and their mobility is 1.6m2(v.s) then the resistivity of the semiconductor(since it is an n-type semiconductor contribution of holes is ignored) is close to:

a.

2 Ωm

b.

0.4 Ωm

c.

4 Ωm

d.

0.2 Ωm


Question ID - 50050 :-

Mobility of electrons in a semiconductor in defined as the ratio of their drift velocity of the applied electric field.  If, for an n-type semiconductor, the density of electrons is 1019m−3 and their mobility is 1.6m2(v.s) then the resistivity of the semiconductor(since it is an n-type semiconductor contribution of holes is ignored) is close to:

a.

2 Ωm

b.

0.4 Ωm

c.

4 Ωm

d.

0.2 Ωm

1 Answer
5876 Votes
3537

Answer Key : (b) -

J= E=nevd

 =ne

=ne

=  =p =

=

= 0.4Ωm.



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