Mobility of electrons in a semiconductor in defined as the ratio of their drift velocity of the applied electric field.  If, for an n-type semiconductor, the density of electrons is 1019m−3 and their mobility is 1.6m2(v.s) then the resistivity of the semiconductor(since it is an n-type semiconductor contribution of holes is ignored) is close to: a. 2 Ωm b. 0.4 Ωm c. 4 Ωm d. 0.2 Ωm

Question ID - 50050 :- Mobility of electrons in a semiconductor in defined as the ratio of their drift velocity of the applied electric field.  If, for an n-type semiconductor, the density of electrons is 1019m−3 and their mobility is 1.6m2(v.s) then the resistivity of the semiconductor(since it is an n-type semiconductor contribution of holes is ignored) is close to: a. 2 Ωm b. 0.4 Ωm c. 4 Ωm d. 0.2 Ωm

3537

J= E=nevd

=ne

=ne

=  =p =

=

= 0.4Ωm.

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