(i) A germanium crystal is doped with antimony. With the help of energy-band diagram, explain how the conductivity of the doped crystal is affected.
(ii) Briefly explain the two processes involved in the formation of a $p-n$ junction.
(iii) What will the effect of (1) forward biasing, and (2) reverse biasing be on the width of depletion layer in a p-n junction diode?
Updated On 18th June 2025
Expert Explanation :
(i) As germanium is an intrinsic semiconductor. The new obtained semiconductor is extrinsic semiconductor i.e., $n$-type and electrons are majority charge carriers.
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When p-n junction is formed, then at the junction free electrons from n-type diffuse over to p-type, thereby filling in the holes in $p$-type. Due to this a layer of positive charge is built on $n$-side and a layer of negative charge is built on $p$-side of the $p$-n junction. This layer sufficiently grows up within a very short time of the junction being formed, preventing any further movement of charge carriers (i.e., electrons and holes) across the junction. Thus a potential difference $V_0$ of the order of 0.1 to 0.3 V is set up across the $p-n$ junction called potential barrier or junction barrier. The thin region around the junction containing immobile positive and negative charges is known as depletion layer.
(iii) (1) Forward biased : As forward voltage opposes the potential barrier and effective barrier potential decreases. It makes the width of the depletion layer smaller.
(2) Reverse biased : As reverse voltage supports the potential barrier and effective barrier potential increases. It makes the width of the depletion layer larger.
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